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FE Electrical and Computer formula sheet

180 key equations from 17 study topics, each with what it is for and where to look it up: the FE Reference Handbook 10.6 section, or the code or textbook when the handbook does not print it. No signup. These are the equations from the free chapters of our FE Electrical and Computer study handbook; the full handbook covers every topic at this depth, with worked examples and the traps that cost points.

180

Equations

17

Study topics

17

Concepts

Mathematics
11% of the exam

Algebra & trig, complex numbers, calculus, ODEs, linear algebra, vectors, discrete math.

Complex Numbers and Phasors

The three equivalent forms of a complex number, Euler's identity, complex arithmetic and roots, and the phasor representation that turns AC circuits into algebra.

Three equivalent forms
z=a+jb=c ∠θ=c ejθz=a+jb=c\,\angle\theta=c\,e^{j\theta}
Rectangular (aa real, bb imag), polar (cc magnitude, θ\theta angle), exponential. Same point in the complex plane.
Magnitude and angle
c=a2+b2,θ=arctan⁡ ⁣(ba)  (quadrant-corrected)c=\sqrt{a^2+b^2},\qquad \theta=\arctan\!\big(\tfrac{b}{a}\big)\;(\text{quadrant-corrected})
Rectangular to polar. Quadrant-correct θ\theta from the signs of aa and bb (or use atan2⁡(b,a)\operatorname{atan2}(b,a)).
Rectangular components
a=ccos⁡θ,b=csin⁡θa=c\cos\theta,\qquad b=c\sin\theta
Polar to rectangular: real and imaginary parts of c∠θc\angle\theta.
Euler's identity
e±jθ=cos⁡θ±jsin⁡θe^{\pm j\theta}=\cos\theta\pm j\sin\theta
Links exponential and trigonometric forms; the basis of phasors and Fourier analysis.
Addition / subtraction
z1±z2=(a1±a2)+j(b1±b2)z_1\pm z_2=(a_1\pm a_2)+j(b_1\pm b_2)
Use rectangular form. Combine real with real, imaginary with imaginary.
Multiplication / division
z1z2=c1c2 ∠(θ1+θ2),z1z2=c1c2 ∠(θ1−θ2)z_1 z_2=c_1 c_2\,\angle(\theta_1+\theta_2),\qquad \tfrac{z_1}{z_2}=\tfrac{c_1}{c_2}\,\angle(\theta_1-\theta_2)
Use polar form. Multiply/divide magnitudes, add/subtract angles.
Conjugate and magnitude product
z∗=a−jb,z z∗=a2+b2=c2z^{*}=a-jb,\qquad z\,z^{*}=a^2+b^2=c^2
Conjugate reflects across the real axis; product gives squared magnitude. Used to rationalize division.
De Moivre (powers)
zn=cn ∠(nθ)=cn(cos⁡nθ+jsin⁡nθ)z^{n}=c^{n}\,\angle(n\theta)=c^{n}(\cos n\theta+j\sin n\theta)
Raise to integer power nn in polar form: magnitude to the power, angle times the power.
k-th roots
z1/k=c1/k ∠θ+360∘nk,    n=0,…,k−1z^{1/k}=c^{1/k}\,\angle\dfrac{\theta+360^\circ n}{k},\;\; n=0,\dots,k-1
Every nonzero zz has exactly kk distinct roots, evenly spaced by 360∘/k360^\circ/k.
Sinusoid to phasor (cosine reference)
Vmcos⁡(ωt+ϕ)  ↔  V=Vm∠ϕV_m\cos(\omega t+\phi)\;\leftrightarrow\;\mathbf{V}=V_m\angle\phi
Phasor = complex amplitude. Convert sines via sin⁡θ=cos⁡(θ−90∘)\sin\theta=\cos(\theta-90^\circ) first.
Element impedances
ZR=R,    ZL=jωL,    ZC=1jωCZ_R=R,\;\; Z_L=j\omega L,\;\; Z_C=\dfrac{1}{j\omega C}
Phasor-domain impedances; ω=2πf\omega=2\pi f in rad/s, RR in Ω\Omega, LL in H, CC in F.
Phasor Ohm's law
V=I Z\mathbf{V}=\mathbf{I}\,Z
Complex Ohm's law. ∠Z\angle Z is the phase by which voltage leads current.

Where it lives: NCEES FE Reference Handbook — Mathematics: Algebra of Complex Numbers and Polar Coordinate System · NCEES FE Reference Handbook — Mathematics: Euler's Identity and Roots · NCEES FE Reference Handbook — Electrical and Computer Engineering: AC Circuits

Read the Mathematics chapter

Probability and Statistics
4% of the exam

Central tendency & dispersion, probability distributions, expected value.

Central Tendency and Dispersion

Mean, median, and mode plus the variance, standard deviation, and coefficient of variation that quantify spread — and the population-versus-sample distinction the FE punishes.

Arithmetic mean
Xˉ=1n∑i=1nXi\bar{X} = \frac{1}{n}\sum_{i=1}^{n} X_i
Balance point of the data. XiX_i = ith observation, nn = number of observations; units match the data.
Weighted mean
Xˉw=∑iwiXi∑iwi\bar{X}_w = \frac{\sum_i w_i X_i}{\sum_i w_i}
Use when observations have unequal importance. wiw_i = weight on XiX_i. Divide by the sum of weights, not the count.
Population variance
σ2=1N∑i=1N(Xi−μ)2\sigma^2 = \frac{1}{N}\sum_{i=1}^{N}(X_i-\mu)^2
Spread of a complete population of size NN about its true mean μ\mu. Units are (data units)2^2.
Sample variance
s2=1n−1∑i=1n(Xi−Xˉ)2s^2 = \frac{1}{n-1}\sum_{i=1}^{n}(X_i-\bar{X})^2
Unbiased estimate of σ2\sigma^2 from a sample. The n−1n-1 divisor (Bessel's correction) accounts for estimating μ\mu by Xˉ\bar{X}.
Standard deviation
σ=σ2,s=s2\sigma=\sqrt{\sigma^2},\qquad s=\sqrt{s^2}
Square root of variance; same units as the data, which is why it is the reportable spread measure.
Coefficient of variation
CV=sXˉCV = \frac{s}{\bar{X}}
Dimensionless relative dispersion; multiply by 100 for percent. Use σ/μ\sigma/\mu for a population. Requires a meaningful nonzero mean.
Computational sum-of-squares identity
∑i=1n(Xi−Xˉ)2=∑i=1nXi2−nXˉ2\sum_{i=1}^{n}(X_i-\bar{X})^2=\sum_{i=1}^{n}X_i^2-n\bar{X}^2
One-pass shortcut for variance using ∑Xi\sum X_i and ∑Xi2\sum X_i^2; divide by NN or n−1n-1 as appropriate.
Median (sorted data)
X~={X(n+1)/2,n odd12 ⁣(Xn/2+Xn/2+1),n even\tilde{X}=\begin{cases}X_{(n+1)/2}, & n\text{ odd}\\[2pt]\tfrac{1}{2}\!\left(X_{n/2}+X_{n/2+1}\right), & n\text{ even}\end{cases}
Middle value of the ascending-sorted data; for even nn average the two central items. Resistant to outliers.
Sample range
R=Xmax⁡−Xmin⁡R = X_{\max}-X_{\min}
Crudest dispersion measure: largest minus smallest value. Sensitive to a single outlier.

Where it lives: NCEES FE Reference Handbook — Engineering Probability and Statistics: Dispersion, Mean, Median, and Mode Values · Montgomery & Runger, Applied Statistics and Probability for Engineers

Read the Probability and Statistics chapter

Ethics and Professional Practice
4% of the exam

Codes of ethics, NCEES Model Law & Rules, intellectual property, safety.

Codes of Ethics and Professional Obligations

The NCEES Model Law/Rules hierarchy of duties — public safety paramount, competence, disclosure, and the seal — that every FE ethics question turns on.

Paramount duty
Obligation to the public≻client/employer≻self\text{Obligation to the public} \succ \text{client/employer} \succ \text{self}
The ordering that resolves nearly every dilemma. Safeguarding public health, safety, and welfare is first and foremost (Model Rules 240.15.A.1).
Competence rule
Accept work  ⟺  qualified by education or experience\text{Accept work} \iff \text{qualified by education or experience}
A licensee takes only assignments within their specific technical field (Model Rules 240.15.B.1).
Seal / responsible charge rule
Seal  ⟺  prepared by or under responsible charge\text{Seal} \iff \text{prepared by or under responsible charge}
Stamp only work you prepared or directly supervised with authority to change and full responsibility. Plan stamping is a disciplinary violation (Model Law 150.10.A.10).
Conflict-of-interest rule
Conflict⇒disclose to all affected parties\text{Conflict} \Rightarrow \text{disclose to all affected parties}
Disclose any known or potential conflict that could influence or appear to influence judgment (Model Rules 240.15.B.6).
Single-project compensation rule
Pay from>1 party⇒written consent of all\text{Pay from} > 1 \text{ party} \Rightarrow \text{written consent of all}
No compensation from more than one party for the same project unless fully disclosed and agreed in writing (Model Rules 240.15.B.7).
Confidentiality rule
Disclose client data  ⟺  consent or required by law\text{Disclose client data} \iff \text{consent or required by law}
Do not reveal professionally obtained facts/data without prior consent, except as authorized or required by law (Model Rules 240.15.B.4).
Public-opinion rule
Public opinion  ⟺  adequate facts∧competent evaluation\text{Public opinion} \iff \text{adequate facts} \wedge \text{competent evaluation}
Speak publicly on engineering matters only on an adequate factual basis (Model Rules 240.15.A.5); separately, identify interested parties who sponsor a statement (240.15.A.6).
Licensure path
Degree→FE→EI→experience→PE→seal\text{Degree} \to \text{FE} \to \text{EI} \to \text{experience} \to \text{PE} \to \text{seal}
Model Law 130.10 sequence: board-accepted (ABET) degree, pass FE to become Engineer Intern, board-set progressive experience (four years after an EAC/ABET bachelor's), five references, pass PE; only a PE may take responsible charge and seal.

Where it lives: NCEES FE Reference Handbook — Ethics and Professional Practice: Code of Ethics (Model Rules §240.15, Rules of Professional Conduct) · NCEES FE Reference Handbook — Ethics and Professional Practice: Model Law §110.20 (Definitions: Responsible Charge), §130.10 (General Requirements for Licensure), §150.10 (Grounds for Disciplinary Action) · NSPE Code of Ethics for Engineers

Read the Ethics and Professional Practice chapter

Engineering Economics
5% of the exam

Time value of money, cost estimation, risk, break-even and benefit-cost analysis.

Time Value of Money

Move money through time with the six compound-interest factors, convert nominal to effective rates, and read a cash-flow diagram the way the FE wants.

Single payment compound amount (F/P)
F=P(1+i)nF = P(1+i)^n
Grows a present sum PP to future FF. ii = rate per period, nn = number of periods.
Single payment present worth (P/F)
P=F(1+i)−nP = F(1+i)^{-n}
Discounts a future sum FF to present PP. Reciprocal of F/PF/P.
Capital recovery (A/P)
(AP,i,n)=i(1+i)n(1+i)n−1\left(\tfrac{A}{P},i,n\right)=\dfrac{i(1+i)^n}{(1+i)^n-1}
Level payment AA that repays present PP over nn periods; the loan-payment factor.
Uniform series present worth (P/A)
(PA,i,n)=(1+i)n−1i(1+i)n\left(\tfrac{P}{A},i,n\right)=\dfrac{(1+i)^n-1}{i(1+i)^n}
Present worth of nn equal end-of-period amounts AA.
Sinking fund (A/F)
(AF,i,n)=i(1+i)n−1\left(\tfrac{A}{F},i,n\right)=\dfrac{i}{(1+i)^n-1}
Deposit per period needed to accumulate future target FF.
Series compound amount (F/A)
(FA,i,n)=(1+i)n−1i\left(\tfrac{F}{A},i,n\right)=\dfrac{(1+i)^n-1}{i}
Future worth of nn equal deposits AA.
Capital recovery identity
(AP,i,n)=(AF,i,n)+i\left(\tfrac{A}{P},i,n\right)=\left(\tfrac{A}{F},i,n\right)+i
Capital recovery equals sinking-fund deposit plus interest on principal; a fast EUAC builder and an algebra check.
Uniform gradient to series (A/G)
(AG,i,n)=1i−n(1+i)n−1\left(\tfrac{A}{G},i,n\right)=\dfrac{1}{i}-\dfrac{n}{(1+i)^n-1}
Converts an arithmetic gradient GG (0, G, 2G, ...) into an equivalent uniform series.
Effective annual rate
ie=(1+rm)m−1i_e=\left(1+\dfrac{r}{m}\right)^{m}-1
rr = nominal annual rate, mm = compounding periods per year. Rate per period is r/mr/m.
Continuous compounding
ie=er−1i_e=e^{r}-1
Limit of effective rate as m→∞m\to\infty; use when interest compounds continuously. Not printed in the FE Reference Handbook 10.6, which gives only non-annual compounding.
Capitalized cost (perpetuity)
P=AiP=\dfrac{A}{i}
Present worth of a perpetual uniform series AA at rate ii; used for endless maintenance/replacement.

Where it lives: NCEES FE Reference Handbook — Engineering Economics: Factor Table and Nomenclature · NCEES FE Reference Handbook — Engineering Economics: Non-Annual Compounding · NCEES FE Reference Handbook — Engineering Economics: Interest Rate Tables

Read the Engineering Economics chapter

Properties of Electrical Materials
4% of the exam

Semiconductors, conductivity & resistivity, permittivity, permeability, thermal properties.

Electrical Properties of Materials

Resistivity and conductivity, temperature coefficients, permittivity and dielectrics, permeability and magnetic cores, and the conductor-vs-insulator scale the FE leans on.

Resistance from resistivity
R=ρLAR = \frac{\rho L}{A}
ρ\rho = resistivity (Ω ⁣⋅ ⁣m)(\Omega\!\cdot\!\text{m}), LL = length (m), AA = cross-section (m²). Gives RR in Ω\Omega.
Conductivity
σ=1ρ\sigma = \frac{1}{\rho}
Reciprocal of resistivity, in S/m. Copper ≈5.8×107 S/m\approx5.8\times10^7\,\text{S/m}.
Temperature dependence of resistivity
ρ=ρ0[1+α(T−T0)]\rho = \rho_0\bigl[1 + \alpha(T - T_0)\bigr]
ρ0\rho_0 at reference T0T_0; α\alpha = temperature coefficient (/∘C)(/^\circ\text{C}). Same form for RR.
Temperature dependence of resistance
R=R0[1+α(T−T0)]R = R_0\bigl[1 + \alpha(T - T_0)\bigr]
Direct device form; copper α≈0.00393 /∘C\alpha\approx0.00393\,/^\circ\text{C} referenced to 20 ∘C20\,^\circ\text{C}.
Parallel-plate capacitance
C=εAd=εrε0AdC = \frac{\varepsilon A}{d} = \frac{\varepsilon_r\varepsilon_0 A}{d}
ε\varepsilon = permittivity (F/m), AA = plate area (m²), dd = separation (m).
Permittivity
ε=εrε0,ε0=8.85×10−12 F/m\varepsilon = \varepsilon_r\varepsilon_0, \qquad \varepsilon_0 = 8.85\times10^{-12}\ \text{F/m}
εr\varepsilon_r (= dielectric constant κ\kappa) is dimensionless; air ≈1\approx1.
Coil inductance
L=N2μAℓ=N2RL = \frac{N^2\mu A}{\ell} = \frac{N^2}{\mathcal{R}}
NN = turns, μ\mu = core permeability (H/m), AA = core area, ℓ\ell = mean path length.
Permeability
μ=μrμ0,μ0=4π×10−7 H/m\mu = \mu_r\mu_0, \qquad \mu_0 = 4\pi\times10^{-7}\ \text{H/m}
μr\mu_r = relative permeability; ≈1\approx1 for non-magnetic, 10310^3–10510^5 for iron/ferrite.
Reluctance
R=ℓμA\mathcal{R} = \frac{\ell}{\mu A}
Magnetic-circuit resistance (H−1)(\text{H}^{-1}); flux ϕ=F/R\phi = \mathcal{F}/\mathcal{R} with mmf F=NI\mathcal{F}=NI.
Sheet resistance
R=RsLW,Rs=ρtR = R_s\frac{L}{W}, \qquad R_s = \frac{\rho}{t}
Thin-film/diffused/trace layer: RsR_s in Ω/□\Omega/\square, tt = thickness, L/WL/W = number of squares.

Where it lives: NCEES FE Reference Handbook — Electrical and Computer Engineering: Resistivity, Capacitors and Inductors · NCEES FE Reference Handbook — Materials Science/Structure of Matter: Electrical Properties · IEEE/ASTM standard conductor tables

Read the Properties of Electrical Materials chapter

Circuit Analysis
11% of the exam

KCL/KVL, series-parallel, Thevenin & Norton, node/loop analysis, waveforms, phasors, impedance.

Phasors, Impedance, and AC Power

Phasor analysis, R/L/C impedance, series-parallel combination, and the P/Q/S power triangle — the core AC toolkit for the FE-ECE exam.

Phasor transform
Xmax⁡cos⁡(ωt+ϕ)  ↔  X∠ϕX_{\max}\cos(\omega t+\phi)\;\leftrightarrow\;X\angle\phi
Maps a sinusoid at frequency ω\omega to a complex phasor. Magnitude is peak or RMS by context; use RMS for power.
Impedance
Z=VI=R+jXZ=\frac{\mathbf{V}}{\mathbf{I}}=R+jX
Ratio of voltage to current phasors. RR = resistance, XX = reactance, both in ohms.
Inductor / capacitor reactance
XL=ωL,XC=1ωCX_L=\omega L,\qquad X_C=\frac{1}{\omega C}
ZL=+jXLZ_L=+jX_L (current lags 90∘90^\circ); ZC=−jXCZ_C=-jX_C (current leads 90∘90^\circ). ω=2πf\omega=2\pi f in rad/s.
Admittance
Y=1Z=G+jBY=\frac{1}{Z}=G+jB
Reciprocal of impedance. GG = conductance, BB = susceptance, in siemens. Adds in parallel.
Series / parallel impedance
Zs=∑Zk,Zp=Z1Z2Z1+Z2Z_s=\sum Z_k,\qquad Z_p=\frac{Z_1 Z_2}{Z_1+Z_2}
Impedances add in series; product-over-sum for two in parallel (or sum admittances).
Real power
P=VrmsIrmscos⁡θ=Irms2RP=V_{\text{rms}}I_{\text{rms}}\cos\theta=I_{\text{rms}}^2 R
Average power dissipated (W). θ\theta = angle from voltage to current = impedance angle.
Reactive power
Q=VrmsIrmssin⁡θ=Irms2XQ=V_{\text{rms}}I_{\text{rms}}\sin\theta=I_{\text{rms}}^2 X
Reactive power (var). Positive for inductive (lagging), negative for capacitive (leading) loads.
Apparent power
S=VrmsIrms=P2+Q2S=V_{\text{rms}}I_{\text{rms}}=\sqrt{P^2+Q^2}
Magnitude of complex power (VA). Always S≥PS\ge P.
Complex power
S=VI∗=P+jQ\mathbf{S}=\mathbf{V}\mathbf{I}^*=P+jQ
I∗\mathbf{I}^* = conjugate of current phasor. Real part is PP, imaginary part is QQ.
Power factor
pf=cos⁡θ=PS\text{pf}=\cos\theta=\frac{P}{S}
Lagging (inductive) when current lags voltage; leading (capacitive) when it leads. Dimensionless, 0 to 1.
Power from impedance
S=Irms2 Z=Vrms2Z∗\mathbf{S}=I_{\text{rms}}^2\,Z=\frac{V_{\text{rms}}^2}{Z^*}
Direct complex power from load impedance; convenient when only ZZ and one of VV or II is known.
Power-factor correction
QC=P(tan⁡θ1−tan⁡θ2)Q_C=P\left(\tan\theta_1-\tan\theta_2\right)
Capacitor reactive power (kvar) to move from θ1\theta_1 to a better θ2\theta_2 at fixed real power PP. The FE Reference Handbook 10.6 prints the power triangle (PP, QQ, pf) but not this correction formula.

Where it lives: NCEES FE Reference Handbook — Electrical and Computer Engineering: AC Circuits (Phasor Transforms, Impedance, Complex Power) · NCEES FE Reference Handbook — Mathematics: Complex Numbers / Euler's Identity · Hayt, Kemmerly & Durbin, Engineering Circuit Analysis

Read the Circuit Analysis chapter

Linear Systems
5% of the exam

Frequency and transient response, resonance, Laplace transforms, transfer functions.

Laplace Transforms and Transfer Functions

Move circuits and systems into the s-domain, build the transfer function H(s), read its poles and zeros, and pull endpoints out with the initial- and final-value theorems.

Laplace transform definition
F(s)=∫0∞f(t) e−st dtF(s) = \int_0^\infty f(t)\,e^{-st}\,dt
Unilateral transform for t≥0t\ge0. s=σ+jωs=\sigma+j\omega is complex frequency.
Core transform pairs
δ(t) ⁣→ ⁣1,    u(t) ⁣→ ⁣1s,    t u(t) ⁣→ ⁣1s2,    e−at ⁣→ ⁣1s+a\delta(t)\!\to\!1,\;\; u(t)\!\to\!\tfrac{1}{s},\;\; t\,u(t)\!\to\!\tfrac{1}{s^2},\;\; e^{-at}\!\to\!\tfrac{1}{s+a}
Impulse, unit step, ramp, decaying exponential. The building blocks for partial-fraction inversion.
Sinusoid pairs
sin⁡(bt) ⁣→ ⁣bs2+b2,cos⁡(bt) ⁣→ ⁣ss2+b2\sin(bt)\!\to\!\dfrac{b}{s^2+b^2}, \quad \cos(bt)\!\to\!\dfrac{s}{s^2+b^2}
Damped versions shift s→s+as\to s+a: e−atsin⁡bt→b/((s+a)2+b2)e^{-at}\sin bt\to b/((s+a)^2+b^2).
Differentiation property
L{f′(t)}=sF(s)−f(0)\mathcal{L}\{f'(t)\} = sF(s) - f(0)
Turns an ODE into algebra and carries the initial condition. Second derivative: s2F(s)−sf(0)−f′(0)s^2F(s)-sf(0)-f'(0).
Integration and time shift
L{ ⁣∫0tf dτ}=F(s)s,    L{f(t−a)u(t−a)}=e−asF(s)\mathcal{L}\Big\{\!\int_0^t f\,d\tau\Big\}=\dfrac{F(s)}{s}, \;\; \mathcal{L}\{f(t-a)u(t-a)\}=e^{-as}F(s)
Integration divides by ss; a delay aa multiplies by e−ase^{-as} (the dead-time factor).
s-domain impedances
ZR=R,ZL=sL,ZC=1sCZ_R=R, \quad Z_L=sL, \quad Z_C=\dfrac{1}{sC}
Generalized impedances. Apply KVL/KCL/dividers as in DC; s→jωs\to j\omega recovers phasor impedance.
Transfer function
H(s)=Y(s)X(s)∣zero ICH(s)=\dfrac{Y(s)}{X(s)}\Big|_{\text{zero IC}}
Output-to-input ratio with zero initial conditions. Output for any input: Y(s)=H(s)X(s)Y(s)=H(s)X(s).
Pole-zero (factored) form
H(s)=K∏(s−zi)∏(s−pj)H(s)=K\dfrac{\prod(s-z_i)}{\prod(s-p_j)}
Zeros ziz_i from numerator roots, poles pjp_j from denominator roots; poles set stability and natural response.
Initial-value theorem
f(0+)=lim⁡s→∞sF(s)f(0^+)=\lim_{s\to\infty} sF(s)
Gives the starting value directly from F(s)F(s). Valid when F(s)F(s) is strictly proper (no impulse at t=0t=0, so sF(s)sF(s) has a finite s→∞s\to\infty limit).
Final-value theorem
f(∞)=lim⁡s→0sF(s)f(\infty)=\lim_{s\to 0} sF(s)
Gives the steady-state value — ONLY if all poles of sF(s)sF(s) are in the open left half-plane.
DC gain
H(0)=lim⁡s→0H(s)H(0)=\lim_{s\to0}H(s)
Steady-state gain to a constant input; equals the final value of the step response of a stable system.
Frequency response
H(jω)=H(s)∣s=jωH(j\omega)=H(s)\big|_{s=j\omega}
Steady-state sinusoidal transfer: magnitude scales amplitude, angle shifts phase. Basis of Bode plots.

Where it lives: NCEES FE Reference Handbook — Mathematics: Laplace Transforms · NCEES FE Reference Handbook — Electrical and Computer Engineering: AC Circuits · NCEES FE Reference Handbook — Instrumentation, Measurement, and Control: Transfer Functions · Nilsson & Riedel, Electric Circuits

Read the Linear Systems chapter

Signal Processing
5% of the exam

Sampling and aliasing, Nyquist, analog filters, digital filters and Z-transforms.

Sampling and the Nyquist Theorem

Why sampling above twice the highest frequency is mandatory, how aliasing folds energy down, and how anti-alias filtering and reconstruction recover the original signal.

Sampling interval and rate
fs=1Tsf_s = \dfrac{1}{T_s}
TsT_s = time between samples (s); fsf_s = sample rate (samples/s = Hz). The fundamental link for every sampling problem.
Sampling theorem (Nyquist criterion)
fs>2fmaxf_s > 2 f_{max}
Sample strictly faster than twice the highest frequency fmaxf_{max} present in the band-limited signal to avoid aliasing. Handbook 'Sampling' note: fs>2fNf_s > 2 f_N.
Nyquist rate
fNR=2fmaxf_{NR} = 2 f_{max}
Minimum acceptable sample rate (Hz). A property of the signal. Used when a problem asks for the smallest fsf_s.
Folding (Nyquist) frequency
ffold=fs2f_{fold} = \dfrac{f_s}{2}
Highest frequency a chosen fsf_s can represent without ambiguity (Hz). A property of the sampler. Frequencies above it alias.
Alias frequency
falias=∣f−kfs∣,    k=round⁡ ⁣(ffs)f_{alias} = \left| f - k f_s \right|, \;\; k = \operatorname{round}\!\left(\tfrac{f}{f_s}\right)
Apparent (baseband) frequency that a component f>fs/2f > f_s/2 takes after sampling. kk is the nearest integer multiple of fsf_s to ff.
First-zone alias (folding)
falias=fs−f(fs/2<f<fs)f_{alias} = f_s - f \quad (f_s/2 < f < f_s)
Quick form when ff lies in the first zone above the fold: the apparent frequency is the mirror image about fs/2f_s/2.
Anti-alias filter cutoff
fc≤fs2f_{c} \le \dfrac{f_s}{2}
Analog low-pass cutoff placed before the ADC; attenuates content above the folding frequency so it cannot alias into the band of interest.
Ideal reconstruction (sinc interpolation)
x(t)=∑nx[n] sinc⁡ ⁣(t−nTsTs)x(t) = \sum_{n} x[n]\,\operatorname{sinc}\!\left(\dfrac{t-nT_s}{T_s}\right)
Whittaker–Shannon formula; exactly recovers a band-limited x(t)x(t) from its samples when the sampling theorem was satisfied.
ADC voltage resolution
ΔV=VH−VL2n\Delta V = \dfrac{V_H - V_L}{2^{n}}
Quantization step of an nn-bit converter over range [VL,VH][V_L, V_H] (V). Sampling sets the time axis of the digitized signal; this companion handbook formula sets the amplitude axis.

Where it lives: NCEES FE Reference Handbook — Instrumentation, Measurement, and Control: Sampling · NCEES FE Reference Handbook — Electrical and Computer Engineering: Sampled Messages · Oppenheim & Schafer, Discrete-Time Signal Processing

Read the Signal Processing chapter

Electronics
7% of the exam

Diodes and transistors, amplifiers, operational amplifiers, instrumentation, power electronics.

Operational Amplifiers

Use the two golden rules of the ideal op-amp to solve inverting, noninverting, summing, difference, integrator, and differentiator circuits, then bound them with gain-bandwidth and slew rate.

Ideal op-amp golden rules
i+=i−=0,v+=v−i_+=i_-=0,\qquad v_+=v_-
Linear region with negative feedback: no input current, zero differential input (virtual short). Solve via KCL at the inverting node.
Open-loop relation
vo=A(v1−v2),A→∞v_o=A(v_1-v_2),\quad A\to\infty
Defines the device; finite differential input × huge gain ⇒ v1≈v2v_1\approx v_2 when not saturated. v1v_1 = noninverting, v2v_2 = inverting.
Inverting amplifier
vo=−RfR1 vinv_o=-\frac{R_f}{R_1}\,v_{in}
Noninverting input grounded; gain set by resistor ratio, negative sign. Input resistance to source = R1R_1.
Noninverting amplifier
vo=(1+RfR1)vinv_o=\left(1+\frac{R_f}{R_1}\right)v_{in}
Signal at noninverting input; gain ≥ 1, ideally infinite input impedance. Rf=0R_f=0 gives a unity buffer.
Inverting summer
vo=−Rf(v1R1+v2R2+⋯ )v_o=-R_f\left(\frac{v_1}{R_1}+\frac{v_2}{R_2}+\cdots\right)
Weighted inverted sum; each input scaled by Rf/RkR_f/R_k. Inputs are isolated by the virtual ground.
Difference amplifier
vo=RfR1 (vb−va)v_o=\frac{R_f}{R_1}\,(v_b-v_a)
Valid with matched ratios (Rf/R1R_f/R_1 on both inverting and noninverting sides). Rejects common-mode signal.
Integrator
vo(t)=−1RC∫vin dt+vo(0)v_o(t)=-\frac{1}{RC}\int v_{in}\,dt + v_o(0)
Capacitor in feedback. Output = inverted time-integral; RCRC sets the time constant.
Differentiator
vo(t)=−RC dvindtv_o(t)=-RC\,\frac{dv_{in}}{dt}
Capacitor at input, resistor feedback. Output ∝ rate of change; noise-prone, usually damped.
Gain-bandwidth product
GBW=ACL f−3dB=ft\text{GBW}=A_{CL}\,f_{-3\text{dB}}=f_t
Constant equal to unity-gain frequency ftf_t. Bandwidth =ft/ACL=f_t/A_{CL}; higher gain ⇒ less bandwidth (small-signal).
Slew rate limit
dvodt∣max⁡=SR\left.\frac{dv_o}{dt}\right|_{\max}=SR
Maximum output rate of change (V/μs). A large-signal limit independent of GBW; exceeding it distorts the waveform.
Full-power bandwidth
fmax⁡=SR2πVpf_{\max}=\frac{SR}{2\pi V_p}
Highest frequency at which a sinusoid of peak VpV_p can be output without slew distortion.
CMRR
CMRR=∣AdAcm∣,CMRRdB=20log⁡10∣AdAcm∣\text{CMRR}=\left|\frac{A_d}{A_{cm}}\right|,\quad \text{CMRR}_{dB}=20\log_{10}\left|\frac{A_d}{A_{cm}}\right|
Ratio of differential to common-mode gain; infinite for an ideal op-amp (Acm=0A_{cm}=0). Measures rejection of common-mode input.

Where it lives: NCEES FE Reference Handbook — Electrical and Computer Engineering: Operational Amplifiers · NCEES FE Reference Handbook — Electrical and Computer Engineering: Electronics · Sedra & Smith, Microelectronic Circuits

Read the Electronics chapter

Power Systems
8% of the exam

Power theory, transmission & distribution, transformers, motors and generators.

AC Power and Three-Phase Systems

Real, reactive, apparent, and complex power; power factor and correction; wye/delta and the √3 relations that drive nearly every power-systems question on the FE.

Real (average) power
P=VrmsIrmscos⁡θ=12VmaxImaxcos⁡θP=V_{rms}I_{rms}\cos\theta=\tfrac{1}{2}V_{max}I_{max}\cos\theta
Average power in watts; θ\theta is the angle from V\mathbf{V} to I\mathbf{I} (the impedance angle). Use RMS values unless peak values are explicitly given.
Reactive power
Q=VrmsIrmssin⁡θQ=V_{rms}I_{rms}\sin\theta
In vars. Positive (absorbed) for inductive/lagging loads, negative for capacitive/leading loads.
Complex and apparent power
S=VI∗=P+jQ,S=∣S∣=VrmsIrms\mathbf{S}=\mathbf{V}\mathbf{I}^{*}=P+jQ,\qquad S=|\mathbf{S}|=V_{rms}I_{rms}
I∗\mathbf{I}^{*} is the conjugate of the phasor current; SS in VA is what conductors and transformers are sized to.
Power triangle / power factor
S=P2+Q2,pf=cos⁡θ=PSS=\sqrt{P^{2}+Q^{2}},\qquad pf=\cos\theta=\frac{P}{S}
Lagging pf = inductive (II lags VV); leading pf = capacitive (II leads VV).
Power factor correction
QC=P(tan⁡θ1−tan⁡θ2)Q_C=P\left(\tan\theta_1-\tan\theta_2\right)
Capacitor reactive power (var) to move from initial angle θ1\theta_1 to target θ2\theta_2 at constant real power PP. The FE Reference Handbook 10.6 prints the power triangle (PP, QQ, pf) but not this correction formula.
Wye line-phase relations
VLL=3 VLN∠+30∘,IL=IϕV_{LL}=\sqrt{3}\,V_{LN}\angle{+30^\circ},\qquad I_L=I_\phi
Star connection; line-to-line voltage leads line-to-neutral by 30∘30^\circ (positive/ABC sequence).
Delta line-phase relations
VLL=Vϕ,IL=3 Iϕ∠−30∘V_{LL}=V_\phi,\qquad I_L=\sqrt{3}\,I_\phi\angle{-30^\circ}
Delta connection; line current is 3\sqrt{3} times phase current and lags it by 30∘30^\circ (positive sequence).
Balanced three-phase power
S=3 VLLIL=3VϕIϕS=\sqrt{3}\,V_{LL}I_L=3V_\phi I_\phi
Same total from line or phase quantities; P=Scos⁡θP=S\cos\theta, Q=Ssin⁡θQ=S\sin\theta with θ\theta the load impedance angle.
Delta-to-wye impedance
ZY=ZΔ3Z_Y=\frac{Z_\Delta}{3}
Balanced loads only; lets you reduce a delta load to per-phase wye analysis.
Per-phase voltage
VLN=VLL3V_{LN}=\frac{V_{LL}}{\sqrt{3}}
480 V→277 V480\,\text{V}\to277\,\text{V}; 208 V→120 V208\,\text{V}\to120\,\text{V}; 13.8 kV→7.97 kV13.8\,\text{kV}\to7.97\,\text{kV}. Used for single-phase (per-phase) equivalents.
Resistive power
P=Vrms2R=Irms2RP=\frac{V_{rms}^{2}}{R}=I_{rms}^{2}R
For a pure resistor θ=0\theta=0, so Q=0Q=0 and S=PS=P; useful as a sanity check.

Where it lives: NCEES FE Reference Handbook — Electrical and Computer Engineering: AC Power (Complex Power) · NCEES FE Reference Handbook — Electrical and Computer Engineering: Balanced Three-Phase (3-φ) Systems · Irwin & Nilsson, Electric Circuits

Read the Power Systems chapter

Electromagnetics
4% of the exam

Electrostatics, magnetostatics, Maxwell's equations, wave propagation, transmission lines.

Electrostatics and Magnetostatics

Coulomb and Gauss for E-fields, potential and capacitance, then Biot-Savart and Ampere for B-fields, inductance, and the energy stored in each field.

Coulomb force
F2=Q1Q24πεr2 ar12\mathbf{F}_2=\dfrac{Q_1 Q_2}{4\pi\varepsilon r^{2}}\,\mathbf{a}_{r12}
Force on charge 2 from charge 1; rr in m, QQ in C, ε=εrε0\varepsilon=\varepsilon_r\varepsilon_0 (F/m). Positive product = repulsive (along ar12\mathbf{a}_{r12}).
Point-charge E field
E=Q4πεr2 ar,F=QE\mathbf{E}=\dfrac{Q}{4\pi\varepsilon r^{2}}\,\mathbf{a}_r,\quad \mathbf{F}=Q\mathbf{E}
EE in V/m, radial, ∝1/r2\propto 1/r^2. Multiply by a test charge to get force.
Line and sheet fields
Eline=ρL2πεr,Esheet=ρs2εE_{\text{line}}=\dfrac{\rho_L}{2\pi\varepsilon r},\quad E_{\text{sheet}}=\dfrac{\rho_s}{2\varepsilon}
Infinite line charge ρL\rho_L (C/m) falls as 1/r1/r; infinite sheet ρs\rho_s (C/m2^2) is uniform.
Gauss's law
∮SD⋅dS=Qenc,D=εE\oint_S \mathbf{D}\cdot d\mathbf{S}=Q_{\text{enc}},\quad \mathbf{D}=\varepsilon\mathbf{E}
Flux of D\mathbf{D} (C/m2^2) through a closed surface equals enclosed charge (C). Use with symmetric Gaussian surfaces.
Parallel-plate E field
E=VdE=\dfrac{V}{d}
Uniform field between plates, directed from ++ to −-; VV in volts, dd in m, EE in V/m.
Parallel-plate capacitance
C=εAd=εrε0AdC=\dfrac{\varepsilon A}{d}=\dfrac{\varepsilon_r\varepsilon_0 A}{d}
AA = plate area (m2^2), dd = spacing (m), εr\varepsilon_r = dielectric constant; CC in farads.
Capacitor stored energy
W=12Cv2=q22C=12qvW=\tfrac{1}{2}Cv^{2}=\dfrac{q^{2}}{2C}=\tfrac{1}{2}qv
Three equivalent forms in joules with q=Cvq=Cv.
Electric / magnetic field energy
WE=∫V12εE2 dV,WH=∫V12μH2 dVW_E=\int_V \tfrac{1}{2}\varepsilon E^{2}\,dV,\quad W_H=\int_V \tfrac{1}{2}\mu H^{2}\,dV
Energy as field integrals over a volume; energy densities 12εE2\tfrac12\varepsilon E^2 (J/m3^3) and 12μH2\tfrac12\mu H^2.
Long-wire magnetic field
H=I2πr,B=μHH=\dfrac{I}{2\pi r},\quad \mathbf{B}=\mu\mathbf{H}
HH in A/m circles the wire (right-hand rule); B=μHB=\mu H in tesla; rr from the wire axis (m).
Ampere's law
∮H⋅dl=Ienc\oint \mathbf{H}\cdot d\mathbf{l}=I_{\text{enc}}
Circulation of H\mathbf{H} around a closed loop equals enclosed current; the fast path for symmetric geometries.
Force on a conductor
F=I L×B\mathbf{F}=I\,\mathbf{L}\times\mathbf{B}
Force on length L\mathbf{L} of conductor carrying current II in flux density B\mathbf{B}; magnitude BILsin⁡θBIL\sin\theta in N.
Inductance
L=N2μAℓ=N2R,R=ℓμAL=\dfrac{N^{2}\mu A}{\ell}=\dfrac{N^{2}}{\mathcal{R}},\quad \mathcal{R}=\dfrac{\ell}{\mu A}
NN turns, core area AA (m2^2), mean path ℓ\ell (m), permeability μ=μrμ0\mu=\mu_r\mu_0; reluctance R\mathcal{R} in H−1^{-1}.
Inductor stored energy
W=12Li2W=\tfrac{1}{2}Li^{2}
Magnetic energy in joules; the dual of 12Cv2\tfrac{1}{2}Cv^2.

Where it lives: NCEES FE Reference Handbook — Electrical and Computer Engineering: Electrostatics / Electrostatic Fields · NCEES FE Reference Handbook — Electrical and Computer Engineering: Magnetic Fields and Capacitors/Inductors · Hayt & Buck, Engineering Electromagnetics

Read the Electromagnetics chapter

Control Systems
6% of the exam

Block diagrams, Bode plots, closed-loop stability, steady-state error, transient performance.

Closed-Loop Response and Stability

Find pole locations from the characteristic equation, test stability with Routh-Hurwitz and root locus, and tie BIBO stability to margins.

Closed-loop characteristic equation
1+G1(s)G2(s)H(s)=01 + G_1(s)G_2(s)H(s) = 0
Roots are the closed-loop poles. For unity feedback, 1+G(s)=01+G(s)=0. Set the denominator of T(s)T(s) to zero.
Closed-loop transfer function
T(s)=G(s)1+G(s)H(s)T(s) = \dfrac{G(s)}{1+G(s)H(s)}
Poles = roots of 1+GH1+GH; these (not the open-loop poles) determine the closed-loop response.
BIBO stability condition
Re(pi)<0∀ i\text{Re}(p_i) < 0 \quad \forall\, i
All closed-loop poles strictly in the left half-plane. A jωj\omega-axis pole is marginal; any RHP pole is unstable.
Routh array entry
bi=an−1an−2i−anan−2i−1an−1b_i = \dfrac{a_{n-1}a_{n-2i} - a_n a_{n-2i-1}}{a_{n-1}}
Each entry is the negative of the 2×22\times 2 determinant of the two rows above, divided by the pivot an−1a_{n-1} — i.e. cross-multiply in the order shown in the latex (pivot-row column term minus top-row column term). Continue until the s0s^0 row.
Routh stability test
stable  ⟺  first column all same sign\text{stable} \iff \text{first column all same sign}
Number of first-column sign changes = number of right-half-plane roots.
Necessary coefficient condition
an,an−1,…,a0>0 (all present)a_n, a_{n-1}, \dots, a_0 > 0 \ \text{(all present)}
Necessary (not sufficient): any missing or non-positive coefficient means at least one non-LHP root.
Auxiliary equation (marginal case)
A(s)=c s2+d=0  ⇒  ωosc=d/cA(s) = c\,s^2 + d = 0 \;\Rightarrow\; \omega_{\text{osc}} = \sqrt{d/c}
Formed from the row above a zeroed first-column entry; gives the sustained-oscillation frequency at KmargK_{\text{marg}}.
Root-locus condition
1+KN(s)D(s)=01 + K\dfrac{N(s)}{D(s)} = 0
Loci start at open-loop poles (K=0K=0), end at open-loop zeros or infinity (K→∞K\to\infty).
Gain margin (dB)
GMdB=−20log⁡10∣G(jω180)∣=20log⁡10KmargKdesign\text{GM}_{\text{dB}} = -20\log_{10}\big|G(j\omega_{180})\big| = 20\log_{10}\dfrac{K_{\text{marg}}}{K_{\text{design}}}
Handbook dB form, evaluated at the phase-crossover ω180\omega_{180}. The linear gain margin is the bare factor Kmarg/KdesignK_{\text{marg}}/K_{\text{design}}; the dB value is 20log⁡1020\log_{10} of that ratio (e.g. a factor of 5≈145\approx 14 dB). Positive dB = stable, minimum-phase.

Where it lives: NCEES FE Reference Handbook — Instrumentation, Measurement, and Control: Control Systems · NCEES FE Reference Handbook — Electrical and Computer Engineering: Decibels and Bode Plots · Ogata, Modern Control Engineering

Read the Control Systems chapter

Communications
5% of the exam

AM/FM/PCM modulation, Fourier methods, multiplexing, digital communications.

Analog Modulation

AM and FM/PM, modulation index, Carson-rule bandwidth, and power distribution — the formula family behind nearly every analog-comms question on the FE.

Conventional AM signal
xAM(t)=Ac[1+a mn(t)]cos⁡(2πfct)x_{AM}(t)=A_c\bigl[1+a\,m_n(t)\bigr]\cos(2\pi f_c t)
aa = modulation index (≤1\le 1 to avoid overmodulation); mn(t)=m(t)/max⁡∣m(t)∣m_n(t)=m(t)/\max|m(t)| is the normalized message; AcA_c, fcf_c = carrier amplitude and frequency.
Modulation index from envelope
a=Emax−EminEmax+Emina=\frac{E_{max}-E_{min}}{E_{max}+E_{min}}
Reads aa directly off the maximum and minimum envelope amplitudes of a single-tone AM waveform (dimensionless).
AM total power
Pt=Pc ⁣(1+a22)P_t=P_c\!\left(1+\frac{a^2}{2}\right)
Single-tone AM. PcP_c = unmodulated carrier power (W); the two sidebands together carry Pca2/2P_c a^2/2.
AM efficiency
η=a22+a2\eta=\frac{a^2}{2+a^2}
Fraction of transmitted power in the sidebands (information). Maximum 33.3%33.3\% at a=1a=1.
DSB-SC signal
xDSB(t)=Ac m(t)cos⁡(2πfct)x_{DSB}(t)=A_c\,m(t)\cos(2\pi f_c t)
Suppressed carrier; all power in sidebands; needs synchronous (coherent) demodulation. Bandwidth 2W2W.
Bandwidths of AM variants
BAM=BDSB=2W,BSSB=WB_{AM}=B_{DSB}=2W,\qquad B_{SSB}=W
WW = message bandwidth (Hz). SSB occupies half the spectrum of DSB/AM.
Angle-modulated carrier
xAng(t)=Accos⁡ ⁣(2πfct+ϕ(t))x_{Ang}(t)=A_c\cos\!\bigl(2\pi f_c t+\phi(t)\bigr)
ϕ(t)\phi(t) = phase deviation set by the message. PM: ϕ=kPm(t)\phi=k_P m(t); FM: ϕ=kF ⁣∫m dλ\phi=k_F\!\int m\,d\lambda.
Instantaneous frequency (FM)
fi(t)=fc+12πdϕdtf_i(t)=f_c+\frac{1}{2\pi}\frac{d\phi}{dt}
Peak excursion of fif_i from fcf_c is the peak frequency deviation Δf\Delta f (Hz).
FM deviation ratio
D=ΔfWD=\frac{\Delta f}{W}
Δf\Delta f = peak frequency deviation (Hz); WW = message bandwidth (Hz). For single tone, DD equals the modulation index β\beta.
Carson's rule (wideband FM)
B≈2(D+1) W=2(Δf+W)B\approx 2(D+1)\,W=2(\Delta f+W)
98%-power bandwidth for D>1D>1. Reduces to B≈2WB\approx 2W for narrowband FM (D≪1D\ll 1).

Where it lives: NCEES FE Reference Handbook — Electrical and Computer Engineering: Amplitude Modulation, Angle Modulation, Frequency Modulation (FM) · Haykin, Communication Systems · Lathi & Ding, Modern Digital and Analog Communication Systems

Read the Communications chapter

Computer Networks
4% of the exam

Routing & switching, topologies, LAN/WAN, OSI & TCP/IP models, network security.

OSI and TCP/IP Models (with Network Topologies)

The seven-layer OSI stack, the four-layer TCP/IP stack, encapsulation into PDUs, and protocols per layer (FE subarea D), plus the star/bus/ring/mesh physical topologies that belong to FE subarea B.

OSI layer order (top to bottom)
App→Pres→Sess→Trans→Net→Link→Phys\text{App} \to \text{Pres} \to \text{Sess} \to \text{Trans} \to \text{Net} \to \text{Link} \to \text{Phys}
The seven OSI layers, layer 7 down to layer 1. Mnemonic: All People Seem To Need Data Processing.
TCP/IP layer order
Application→Transport→Internet→Network Interface\text{Application} \to \text{Transport} \to \text{Internet} \to \text{Network Interface}
The four TCP/IP layers, top to bottom; the practical model used on the internet.
OSI to TCP/IP mapping
{7,6,5} ⁣→ ⁣App,  4 ⁣→ ⁣Trans,  3 ⁣→ ⁣Internet,  {2,1} ⁣→ ⁣Net. Interface\{7,6,5\}\!\to\!\text{App},\;4\!\to\!\text{Trans},\;3\!\to\!\text{Internet},\;\{2,1\}\!\to\!\text{Net.\ Interface}
TCP/IP Application = OSI App+Pres+Sess; Network Interface = OSI Data Link+Physical; Transport and Internet map one-to-one.
PDU by layer
message→segment→packet→frame→bits\text{message} \to \text{segment} \to \text{packet} \to \text{frame} \to \text{bits}
Protocol Data Unit at Application, Transport, Network, Data Link, and Physical respectively. Packet = datagram.
Encapsulation rule
PDUn=Headern ∥ PDUn+1\text{PDU}_{n} = \text{Header}_{n} \,\|\, \text{PDU}_{n+1}
Each layer n prepends its header to the PDU from the layer above; ∥\| denotes concatenation. Reversed on receipt (decapsulation).
Device-to-layer map
hub ⁣= ⁣L1,switch/bridge ⁣= ⁣L2,router ⁣= ⁣L3\text{hub}\!=\!L1,\quad \text{switch/bridge}\!=\!L2,\quad \text{router}\!=\!L3
Physical, Data Link, and Network layers respectively; the layer a device reads to make forwarding decisions.
Full-mesh link count (subarea B)
L=n(n−1)2L = \dfrac{n(n-1)}{2}
Topology metric (FE subarea B, Network topologies): number of direct links in a full mesh of n nodes; quantifies the cost of full redundancy.
TCP vs UDP
TCP: connection-oriented, reliable;    UDP: connectionless, best-effort\text{TCP: connection-oriented, reliable};\;\; \text{UDP: connectionless, best-effort}
TCP detects loss/duplication/reordering and corrects; UDP has less overhead but no delivery guarantee.

Where it lives: NCEES FE Reference Handbook — Electrical and Computer Engineering: Computer Networks (OSI and TCP/IP models, encapsulation) · NCEES FE Electrical and Computer Exam Specification — Computer Networks subareas B (Network topologies: mesh, ring, star) and D (Network models: OSI, TCP/IP) · ISO/IEC 7498-1 — OSI Basic Reference Model · Tanenbaum & Wetherall, Computer Networks

Read the Computer Networks chapter

Digital Systems
8% of the exam

Number systems, Boolean logic, K-maps, flip-flops & counters, state machines, timing.

Boolean Algebra and Logic Gates

Master the Boolean axioms, De Morgan's theorems, the seven core gates, and the SOP/POS forms that turn any truth table into a circuit.

Identity laws
A+0=A,A⋅1=AA + 0 = A,\quad A\cdot 1 = A
OR with 0 and AND with 1 leave a variable unchanged. The starting point for most simplifications.
Null (dominance) laws
A+1=1,A⋅0=0A + 1 = 1,\quad A\cdot 0 = 0
OR with 1 forces 1; AND with 0 forces 0. Use to collapse a term to a constant.
Complement laws
A+A‾=1,A⋅A‾=0A + \overline{A} = 1,\quad A\cdot\overline{A} = 0
A variable ORed with its complement is 1; ANDed with its complement is 0. Key to eliminating variables.
Idempotent and involution
A+A=A,A⋅A=A,A‾‾=AA + A = A,\quad A\cdot A = A,\quad \overline{\overline{A}} = A
Repeated operands collapse; double inversion cancels. Lets you duplicate or remove terms freely.
Distributive laws
A(B+C)=AB+AC,A+BC=(A+B)(A+C)A(B+C) = AB + AC,\quad A + BC = (A+B)(A+C)
Both AND-over-OR and OR-over-AND hold. The second form has no arithmetic analog — used to convert between SOP and POS.
Absorption
A+AB=A,A(A+B)=AA + AB = A,\quad A(A+B) = A
Deletes a term subsumed by a simpler one. The single most useful simplification on the exam.
Redundancy / simplification
A+A‾B=A+B,A(A‾+B)=ABA + \overline{A}B = A + B,\quad A(\overline{A}+B) = AB
Removes a complemented literal that adds nothing. Easy to miss; check whenever a variable and its complement coexist.
Consensus theorem
AB+A‾C+BC=AB+A‾CAB + \overline{A}C + BC = AB + \overline{A}C
The consensus term BCBC is redundant when AA appears true in one product and complemented in another. Drop it.
De Morgan's theorems
A⋅B‾=A‾+B‾,A+B‾=A‾⋅B‾\overline{A\cdot B} = \overline{A} + \overline{B},\quad \overline{A+B} = \overline{A}\cdot\overline{B}
Complement of a product/sum. Use to invert expressions and to map between AND/OR and NAND/NOR.
XOR and XNOR
A⊕B=AB‾+A‾B,A⊕B‾=AB+A‾ B‾A\oplus B = A\overline{B} + \overline{A}B,\quad \overline{A\oplus B} = AB + \overline{A}\,\overline{B}
XOR is true when inputs differ (mod-2 sum); XNOR is the equality/coincidence detector.
Canonical SOP / POS
F=∑mi=∏MjF = \textstyle\sum m_i = \prod M_j
Sum of minterms for the 1-rows of the truth table, or product of maxterms for the 0-rows. Both specify the same function.
NAND as inverter
A⋅A‾=A‾\overline{A\cdot A} = \overline{A}
Tie both NAND inputs together to make a NOT. Foundation of NAND-universal logic.

Where it lives: NCEES FE Reference Handbook — Electrical and Computer Engineering: Logic Operations and Boolean Algebra · NCEES FE Reference Handbook — Electrical and Computer Engineering: De Morgan's Theorems · IEEE Std 91/91a — Graphic Symbols for Logic Functions · Mano & Ciletti, Digital Design

Read the Digital Systems chapter

Computer Systems
5% of the exam

Microprocessors, memory technology and hierarchy, interfacing.

Memory Technology and Hierarchy

SRAM/DRAM/ROM/flash, the cache-driven memory hierarchy, address decoding and cache mapping, virtual memory, and the effective-access-time math the FE rewards.

Average memory access time (AMAT)
AMAT=thit+(1−h) tpenaltyAMAT = t_{hit} + (1-h)\,t_{penalty}
hh = hit rate, thitt_{hit} = fast-level access time, tpenaltyt_{penalty} = extra time to service a miss. Hit time is always paid; the penalty only on misses.
Two-level cache AMAT
AMAT=tL1+mL1(tL2+mL2 tmem)AMAT = t_{L1} + m_{L1}\big(t_{L2} + m_{L2}\,t_{mem}\big)
mL1,mL2m_{L1},m_{L2} are local miss rates. The L2 AMAT is nested as the L1 miss penalty; extend the same way for L3.
Cache capacity
C=S×A×BC = S\times A\times B
CC = data capacity (bytes), SS = number of sets, AA = associativity (ways), BB = block size (bytes). From the FE handbook.
Cache address field widths
#offset=log⁡2B,    #index=log⁡2S,    #tag=n−#index−#offset\#offset=\log_2 B,\;\; \#index=\log_2 S,\;\; \#tag=n-\#index-\#offset
nn = total address bits. Offset selects a byte in the block, index selects a set, tag is stored and compared.
Number of cache sets
S=CA×BS = \dfrac{C}{A\times B}
Solve the capacity relation for sets. Direct-mapped has A=1A=1; fully associative has S=1S=1.
Hit and miss rate
h+m=1h + m = 1
hh = fraction of accesses found in the level, m=1−hm=1-h = fraction that miss. Dimensionless.
Address lines for a memory size
#addr lines=log⁡2(#addressable words)\#\text{addr lines} = \log_2(\#\text{addressable words})
A WW-word chip needs log⁡2W\log_2 W lines; a TT-word bank needs log⁡2T\log_2 T total lines.
Chip count and select lines
Nchips=TW,#select=log⁡2 ⁣TWN_{chips}=\dfrac{T}{W},\qquad \#\text{select} = \log_2\!\frac{T}{W}
TT = total words, WW = words per chip. High-order lines decode to chip-selects; low-order log⁡2W\log_2 W lines address within a chip.
Effective access time with page faults
EAT=(1−p) tmem+p tfaultEAT = (1-p)\,t_{mem} + p\,t_{fault}
pp = page-fault rate, tmemt_{mem} = in-memory access time, tfaultt_{fault} = fault service time (disk). Same form as AMAT for virtual memory.
DRAM vs SRAM
SRAM: 6T latch, no refresh;    DRAM: 1T1C, periodic refresh\text{SRAM: 6T latch, no refresh};\;\;\text{DRAM: 1T1C, periodic refresh}
SRAM is faster/lower-density (cache); DRAM is denser/cheaper but must be refreshed (main memory). Both volatile.

Where it lives: NCEES FE Reference Handbook — Electrical and Computer Engineering: Computer Systems (Memory/Storage Types, Cache, Tag/Index/Offset, C = S·A·B) · Patterson & Hennessy, Computer Organization and Design — The Memory Hierarchy · Hennessy & Patterson, Computer Architecture: A Quantitative Approach — Appendix B (Memory Hierarchy)

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Software Engineering
4% of the exam

Algorithms and complexity, data structures, iteration, recursion, control flow, testing.

Algorithms and Complexity

Read Big-O/Theta/Omega, compare searching and sorting costs, and solve recurrences so you can pick the right algorithm and predict how it scales.

Big-O (upper bound)
f(n)=O(g(n))  ⟺  ∃ c,n0: f(n)≤c g(n) ∀n≥n0f(n)=O(g(n))\iff \exists\,c,n_0:\ f(n)\le c\,g(n)\ \forall n\ge n_0
Asymptotic ceiling on growth; drop constants and lower-order terms. Used to state worst-case scaling of an algorithm.
Big-Omega (lower bound)
f(n)=Ω(g(n))  ⟺  ∃ c,n0: f(n)≥c g(n) ∀n≥n0f(n)=\Omega(g(n))\iff \exists\,c,n_0:\ f(n)\ge c\,g(n)\ \forall n\ge n_0
Asymptotic floor on growth; states the best the algorithm can do for large nn.
Big-Theta (tight bound)
f(n)=Θ(g(n))  ⟺  f=O(g) and f=Ω(g)f(n)=\Theta(g(n))\iff f=O(g)\ \text{and}\ f=\Omega(g)
Exact growth class. Merge/heap sort are Θ(nlog⁡n)\Theta(n\log n) in all cases; use when both bounds match.
Growth hierarchy
O(1)<O(log⁡n)<O(n)<O(nlog⁡n)<O(n2)<O(n3)<O(2n)<O(n!)O(1)<O(\log n)<O(n)<O(n\log n)<O(n^2)<O(n^3)<O(2^n)<O(n!)
Ordering for large nn. Resolve any 'which is faster' question by placing each candidate on this ladder.
Binary search cost
T(n)=T(n/2)+O(1)⇒O(log⁡2n)T(n)=T(n/2)+O(1)\Rightarrow O(\log_2 n)
Comparisons to find/reject a key in a SORTED array of nn elements; at most ⌈log⁡2n⌉\lceil\log_2 n\rceil.
Linear search cost
Tworst=n,Tavg=n2 → O(n)T_{\text{worst}}=n,\qquad T_{\text{avg}}=\tfrac{n}{2}\ \to\ O(n)
Scan of an unsorted array of nn elements; no preprocessing required.
Merge / heap sort
T(n)=2T(n/2)+O(n)⇒Θ(nlog⁡n)T(n)=2T(n/2)+O(n)\Rightarrow \Theta(n\log n)
Guaranteed linearithmic in every case. Merge sort needs O(n)O(n) aux space; heap sort needs O(1)O(1).
Quick sort
Tavg=O(nlog⁡n),Tworst=O(n2)T_{\text{avg}}=O(n\log n),\quad T_{\text{worst}}=O(n^2)
Fast average pivot-partition sort; degrades to O(n2)O(n^2) on a poor pivot (e.g., sorted input, naive pivot).
Bubble / insertion sort
Tavg=Tworst=O(n2),Tbest,insertion=O(n)T_{\text{avg}}=T_{\text{worst}}=O(n^2),\quad T_{\text{best,insertion}}=O(n)
Simple O(n2)O(n^2) sorts; insertion sort is O(n)O(n) on already-sorted data, the others' best case is still O(n2)O(n^2).
Master Theorem form
T(n)=a T(n/b)+f(n)T(n)=a\,T(n/b)+f(n)
Solve divide-and-conquer recurrences by comparing f(n)f(n) with nlog⁡ban^{\log_b a}; equal magnitude adds a log⁡n\log n factor.
Naive recursive Fibonacci
T(n)=T(n−1)+T(n−2)+O(1)=Θ(φ n)T(n)=T(n-1)+T(n-2)+O(1)=\Theta(\varphi^{\,n})
Branching recursion without memoization is exponential; the iterative version is O(n)O(n) time, O(1)O(1) space.
Polynomial-time runtime scaling
T(kn)T(n)=k pfor T(n)=Θ(np)\frac{T(kn)}{T(n)}=k^{\,p}\quad\text{for } T(n)=\Theta(n^p)
How runtime scales when input multiplies by kk. For O(n2)O(n^2), doubling input quadruples time.

Where it lives: NCEES FE Reference Handbook — Electrical and Computer Engineering: Algorithms and Algorithm Efficiency (Big-O) · NCEES FE Reference Handbook — Electrical and Computer Engineering: Software Syntax Guidelines · Cormen, Leiserson, Rivest, Stein — Introduction to Algorithms

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Now use them on real questions

Ten free FE Electrical and Computer questions with full worked solutions and figures where needed, no account required. Then the full bank, timed mock exams and the complete study handbook when you are ready.

Many equations follow the FE Reference Handbook 10.6 as NCEES prints it; the rest come from the code, design standard or textbook named in their “Where it lives” line or note. The on-screen reference NCEES supplies on exam day is the copy that counts, so check the edition for your sitting. Independent study resource; not affiliated with, endorsed by, or sponsored by NCEES.